1993 – 2000

  • Improved quality a-SiC: H films deposited by a combination of heated filament and rf plasma deposition technique: D. Das, S. Chattopadhyay, and A. K. Barua; Solar Energy Materials and Solar Cells 51,1(1998).
  • Optoelectronic and structural properties of good quality hydrogenated amorphous silicon carbide films deposited by Hot Wire assisted RF plasma deposition technique; S. Chattopadhyay, Debabrata Das, A K. Barua, D. L Williamson, and S. T. Kshirsagar; Jpn. J. Appl. Phys. 37, 5480 (1998).
  • Study of hydrogenated amorphous silicon films prepared at intermediate frequencies; S. Chattopadhyay; Philosophical Magazine B.75, 587 (1997).
  • Deposition of boron-doped a-Si: H films by a novel combination of rf glow discharge technique and filament heating: Enhancement of doping efficiency; Debabrata Das, S. N. Sharma, T. K. Bhattacharyya, S. Chattopadhyay, A. K. Barua, and Ratnabali Banerjee; Solid State Communications 97, 769 (1996).
  • Efficient boron incorporation in hydrogenated silicon films by a novel combination of rf glow discharge technique and heated filament; S. Chattopadhyay, Debabrata Das, S. N. Sharma, A. K. Barua, and Ratnabali Banerjee; S. T. Kshirsagar; Jpn. J. Appl. Phys. 34, 5743 (1995).
  • Study of effects of inter-electrode spacing and preheating of source gases on hydrogenated amorphous silicon films prepared at high growth rates; Debabrata Das, S. Chattopadhyay, A. K. Barua, and Ratnabali Banerjee; J. Appl. Phys. 78, 3193(1995).
  • Short-range order and microstructure and their correlation with light-induced degradation in hydrogenated amorphous silicon deposited at high growth rates by Cathode Heating technique; S. Chattopadhyay, S. N. Sharma and Ratnabali Banerjee, D. M. Bhusari, S. T.Kshirsagar, Yan Chen and D. L. Williamson; J. Appl. Phys. 76, 5208 (1994).
  • Hydrogenated amorphous silicon films deposited at high growth rates by cathode heating technique: properties and light-induced degradation; S. Chattopadhyay and Ratnabali Banerjee; Solar Energy Materials and Solar Cells 36, 65 (1994).
  • Control of powder formation in silane discharge by Cathode Heating and hydrogen dilution for high rate deposition of hydrogenated amorphous silicon thin film; Ratnabali Banerjee, S. N. Sharma, S. Chattopadhyay, A. K. Batabyal and A. K. Barua; J. Appl. Phys. 74, 4540 (1993).
  • Hydrogenated amorphous silicon films prepared at high substrate temperatures: Properties and light-induced degradation; Ratnabali Banerjee, Sukriti Ghosh, S. Chattopadhyay, A. K. Bandyopadhyay, P. Chaudhuri, A. K. Batabyal and A. K. Barua; J. Appl. Phys. 73, 7435 (1993).