2000 – 2005

  • The generally applicable self-masking technique for nanotip array fabrication; K. H. Chen, C. H. Hsu, H. C. Lo, S. Chattopadhyay, C. T. Wu, J. S. Hwang, D. Das, L. C. Chen; Int. J. Nanoscience 4, 879 (2005).
  • World Scientific Publishing Co., Singapore. Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition; S. C. Shi, C. F. Chen, G. M. Hsu, J. S. Hwang, S. Chattopadhyay, Z. H. Lan, K. H. Chen, L. C. Chen, Appl. Phys. Lett. 87, 203103 (2005).
  • Field emission from quasi-aligned aluminum nitride nanotips; Shih-Chen Shi, Chia-Fu Chen, S. Chattopadhyay, K. H. Chen, L. C. Chen; Applied Physics Letters 87, 73109(2005).
  • Growth of single-crystal wurtzite aluminum nitride nanotips with self-selective apex angle; Shih-Chen Shi, Chia-Fu Chen, Surojit Chattopadhyay, Zon-Huang Lan, Kuei-Hsien Chen, Li-Chyong Chen; Adv. Func. Mater. 15, 781 (200 Molecular sensings by ultrafine silver crystals on Aluminum nitride nanorod templates; S. Chattopadhyay, S. C. Shi, Z. H. Lan, C. F. Chen, L. C. Chen, K. H. Chen; J. Am. Chem. Soc. (communication) 127, 2820 (2005).
  • Surface-enhanced Raman spectroscopy using self-assembled silver nanoparticles on silicon nanotips; S. Chattopadhyay, Hung-Chun Lo, Chih-Hsun Hsu, Li-Chyong Chen, and Kuei-Hsien Chen; Chem. Mater. 17, 553 (2005).
  • Growth of vertically aligned IrO2 nanotubes; Reui-San Chen, Hong-Ming Chang, Ying-Sheng Huang, Dah-Shyang Tsai, Surojit Chattopadhyay, and Kuei-Hsien Chen; J. Cryst. Growth 271, 105 (2004).
  • Generally applicable self masking technique for nanotips array fabrication; K. H. Chen, C. H. Hsu, H. C. Lo, S. Chattopadhyay, C. T. Wu, J. S. Hwang, D. Das, L. C. Chen; Tamkang Journal of Science and Engineering 7, 129 (2004).
  • Electronic and bonding structures of B-C-N thin films by x-ray absorption and photoemission spectroscopy; S. C. Ray, H. M. Tsai, C.W. Bao, J. W. Chiou, J. C. Jan, Krishna Kumar, and W. F. Pong, M.-H. Tsai, S. Chattopadhyay, and L. C. Chen, S. C. Chien, M. T. Lee, and S. T. Lin, K. H. Chen; J. Appl. Phys. 96, 208 (2004).
  • Growth of well-aligned IrO2 nanotubes on LiTaO3 (012) substrates; R. S. Chen, Y. S. Huang, D. S. Tsai, S. Chattopadhyay, C. T. Wu, Z. H. Lan, and K. H. Chen; Chem. Mater. 16, 2457 (2004).
  • X-ray absorption studies of amorphous boron carbon nitrogen ternary alloys; S. C. Ray, H. M. Tsai, J. W. Chiou, J. C. Jan, Krishna Kumar, W. F. Pong, M. H. Tsai, S. Chattopadhyay, L. C. Chen, S. C. Chien, S. T. Lin, and K. H. Chen; Diamond and Related Materials 13, 1553 (2004).
  • Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in TiO2 and PVA matrix; A. Chatterjee, S. Chattopadhyay, C. W. Hsu, C. H. Shen, L. C. Chen, C. C. Chen, and K. H. Chen; Journal of Materials Research 19, 1768 (2004).
  • Amorphous boron carbon nitride as a pH sensor; C. L. Lee, B. R. Huang, S. Chattopadhyay, K. H. Chen and L. C. Chen; Appl. Phys. Lett. 84, 2676 (2004).
  • Bandgap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates; C. S. Chang, S. Chattopadhyay, L. C. Chen, K. H. Chen, C. W. Chen and Y. F. Chen; Phys. Rev. B 68, 125322 (2003).
  • Mechanical properties of amorphous boron carbon nitride films produced by dual gun sputtering; S. C. Chien, S. Chattopadhyay, L. C. Chen, S. T. Lin, and K. H. Chen; Diamond and Related Materials 12, 1463 (2003).
  • Doping and Electrical Properties of Amorphous Silicon Carbon Nitride Films; Y. C. Chou, S. Chattopadhyay, L. C. Chen, Y. F. Chen, and K. H. Chen; Diamond & Related Materials 12, 1213 (2003).
  • Elastic, mechanical and thermal properties of nanocrystalline CVD diamond films; J. Philip, P. Hess, T. Feygelson, J. E. Butler, S. Chattopadhyay, K. H. Chen and L. C. Chen; J. Appl. Phys.93, 2164 (2003).
  • Bonding characterization, density measurement, and thermal diffusivity study of amorphous silicon carbon nitride and boron carbon nitride thin films; S. Chattopadhyay, L.C. Chen, S. C. Chien, S. T. Lin, and K. H. Chen; J. Appl. Phys. 92, 5150 (2002).
  • Phase and thickness dependence of thermal diffusivity in SiCxNy and BCxNy; S. Chattopadhyay, L. C. Chen, S. C. Chien, S. T. Lin, C. T. Wu, and K. H. Chen; Thin Solid Films 420-421C, 205 (2002).
  • Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering; D. Das, K. H. Chen, S. Chattopadhyay, and L.C. Chen; J. Appl. Phys. 91, 4944 (2002).
  • Thermal diffusivity in diamond, SiCxNy, and BCxNy; S. Chattopadhyay, S. C. Chien, L. C. Chen, K. H. Chen, and H. Y. Lee; Diamond & Related Materials 11, 708 (2002).
  • Correlation of electrical, thermal, and microstructural properties of hydrogenated microcrystalline silicon thin films; D. Das, M. Jana, A. K. Barua, S. Chattopadhyay, L. C. Chen and K.H. Chen; Jpn. J. Appl. Phys. Lett.41, L229 (2002).
  • Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique; S. Chattopadhyay, L. C. Chen, C. T. Wu, K. H. Chen, J. S. Wu, Y. F. Chen, G. Lehmann, and P. Hess; Appl. Phys. Lett. 79,332 (2001).
  • Control of the crystallite size and passivation of defects in porous silicon by a novel method; S. N. Sharma, R. Banerjee, Debabrata Das, S. Chattopadhyay, and A. K. Barua; Appl. Surf. Science 182, 335 (2001).